• STUDIES ON EMITTER- BASE AND BASE-COLLECTOR JUNCTIONS OF A HIGH FREQUENCY TRANSISTOR

Dr R.K. Gupta

Abstract:
In this work the analysis of emitter base and base-collection junctions of a high frequency transistor BF- 200 has been reported. The important feature of the investigation is the use of Helium- Neon Laser (0.50 watt, Make Spectra Laser) for the illumination of the junctions cited above. Further such junctions are obtained by cutting the top of the high frequency transister BF 200 and preparing the junctions for exposure from the He-Ne Laser light. It is observed that output as measured by a multimeter is more in the case of base emitter junction compared to base -collector junction. Further the analysis is extended using polarised