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S.No Particular Pdf Page No.
1
  • EFFECT OF INJECTOR OPENING PRESSURE ON THE PERFORMANCE AND EMISSION CHARACTERISTICS OF DI DIESEL ENGINE RUNNING ON HONNE OIL AND DIESEL FUEL BLEND

    DOI:DOI:18.A003.aarf.J14I01.000573

S.Venkateswarlu, Dr.G.Prasanthi, Dr.M.Yohan

Abstract: Due to the increasing demand for fossil fuels and environmental threat, a number of renewable sources of energy have been studied worldwide.

1-11
2

B. Goutham, V. Premnath

Abstract: The use of electronics in the automobiles is particularly concentrated on the improvement of performance parameters, comfort and safety conditions.

12-23
3

Sumesh Jain, Prof(Dr).R.S.Sharma

Abstract: Affordable housing projects are characterized by an increasing demand mainly due to urbanization.

24-30
4

Deepali Khandekar, Prof. Patil S.P

Abstract: Prediction of EEG signals has core issues on EEG based brain mapping analysis. Epilepsy is the most common neurological disorder which is characterized by sudden and recurrent neuronal firing in the brain.

31-39
5

Sanidhya Naikwad, I. A. Palani, S. N. Naikwad

Abstract: Laser forming is a non-contact type recently developed technique that uses a defocused laser beam to form sheet metal by inducing thermal stresses rather than external forces.

40-58
6

Jagandeep Kaur, Dr. Janak B. Patel

Abstract: Analog to Digital converters are essential between analog and digital circuits. It is one of the most important building blocks in sensor node which digitize the analog environmental information we live in.

59-66
7

P.V.K.MURTHY & M.V.S. MURALI KRISHNA

Abstract: Investigations were carried out to evaluate the performance parameters of a conventional diesel engine with different operating conditions [normal temperature and pre-heated temperature] of linseed oil in crude form and in biodiesel form with varied injection timing and injector opening pressure.

67-89
8

Parag Parashar

Abstract: The present work aims at the mathematical analysis and estimation of avalanche breakdown voltage for a Gaussian doping profile in the drift region of Vertical DIMOSFET with 4H- SiC wafer.

90-97
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